Elektronikos dalys : W4NXD8C-L000

Gamintojas : Cree

Pakuotė :

Pin :

Aprašymas : Diameter 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

Temperatūra : Min °C | Maks °C

Datasheet : W4NXD8C-L000 PDF

• W4NXD8C-0000
• W4NXD8C-L000
• W4NXD8C-S000